| PART |
Description |
Maker |
| FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET 7.6 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
N & P-channel MOSFET
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| SUP85N08-08 SUB85N08-08 |
N-Channel 75-V (D-S) 175 Degree Celcious MOSFET N通道75 - V（下副秘书长175度Celcious MOSFET
N-Channel 75-V (D-S) 175C MOSFET N通道75 - V（下副秘书长75荤MOSFET
N-Channel MOSFET
N-Channel 75-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SUB75P03-08 SUP75P03-08 |
P-Channel 30-V (D-S), 175C MOSFET P沟道30 V的（副）75C MOSFET
P-Channel 30-V (D-S) 175C MOSFET
P-Channel MOSFET
P-Channel Enhancement-Mode Transistors
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| AM29CPL154H-25DC AM29CPL154H-25/BXA AM29CPL154H-25 |
User Programmable Special Function ASIC
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7219 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6788U with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-259AA package; A IRFI260 with Standard Packaging
800V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAE40 with Standard Packaging
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRF5NJ5305 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9110 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN340 with Standard Packaging
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFNG50 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7237 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANS2N7237 with Standard Packaging
40V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRL7N1404 with Standard Packaging 用户可编程ASIC的特殊功
|
Advanced Micro Devices, Inc.
|
| STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五（巴西）直|甲（丁）|52
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件
STD2N50-1 I-PAK MOSFET-TRANSIT
N-CHANNEL MOSFET
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STD2NB80 6424 STD2NB80T4 |
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 1.9AI（四）|52AA
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| ZVP2110ASTZ UZVN3306ASTOB DIODESINC-ZVN3306ASMTA U |
230 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3
270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
260 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
90 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
ZETEX PLC
DIODES INC
|
| STB6NB90 6439 |
N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET
From old datasheet system
N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
ST Microelectronics
|
| FDN302 FDN302P FDN302PNL FDN302PL99Z |
CAP CER 2.2UF 16V 10% X5R 1206 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
P-Channel 2.5V Specified PowerTrench MOSFET
P-Channel 2.5V Specified PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
